DIM100CHS12-H000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 1/7 www.dynexsemi.com ds5632-1.3 august 2003 features non punch through silicon 10 s short circuit withstand f sw for applications > 20khz isolated copper baseplate applications inverters motor controllers ups electronic welders the powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600v to 3300v and currents up to 3600a. the DIM100CHS12-H000 is a fast half bridge 1200v, n channel enhancement mode, insulated gate bipolar transistor (igbt) module. the igbt has a wide reverse bias safe operating area (rbsoa) plus full 10 s short circuit withstand. the module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ordering information order as: DIM100CHS12-H000 note: when ordering, please use the complete part number. key parameters v ces 1200v v ce(sat) (typ) 2.4v i c (max) 100a i c(pk) (max) 200a DIM100CHS12-H000 fast half bridge igbt module target infomation fig. 1 half bridge circuit diagram fig. 2 module outline outline type code: c (see package details for further information) 3(e2) 2(c1) 1(e1/c2) 7(e 2 ) 6(g 2 ) 5(e 1 ) 4(g 1 )
DIM100CHS12-H000 2/7 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com test conditions continuous dissipation - junction to case continuous dissipation - junction to case mounting torque 5nm (with mounting grease) transistor diode - mounting - m6 electrical connections - m4 parameter thermal resistance - transistor (per arm) thermal resistance - diode (per arm) thermal resistance - case to heatsink (per module) junction temperature storage temperature range screw torque thermal and mechanical ratings internal insulation: clearance: baseplate material: cti (critical tracking index): creepage distance: symbol r th(j-c) r th(j-c) r th(c-h) t j t stg - units ?c/kw ?c/kw ?c/kw ?c ?c ?c nm nm max. 180 500 30 150 125 125 5 2 typ. - - - - - - - - min. - - - - - ?0 - - test conditions v ge = 0v - t case = 70?c 1ms, t case = 110?c t case = 25?c, t j = 150?c v r = 0, t p = 10ms, t vj = 125?c commoned terminals to base plate. ac rms, 1 min, 50hz symbol v ces v ges i c i c(pk) p max i 2 t v isol absolute maximum ratings - per arm stresses above those listed under 'absolute maximum ratings' may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety prec autions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25?c unless stated otherwise units v v a a w ka 2 s v max. 1200 20 100 200 694 tbd 2500 parameter collector-emitter voltage gate-emitter voltage continuous collector current peak collector current max. transistor power dissipation diode i 2 t value isolation voltage - per module
DIM100CHS12-H000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 3/7 www.dynexsemi.com test conditions v ge = 0v, v ce = v ces v ge = 0v, v ce = v ces , t case = 125?c v ge = 20v, v ce = 0v i c = 5ma, v ge = v ce v ge = 15v, i c = 100a v ge = 15v, i c = 100a, , t case = 125?c dc t p = 1ms i f = 100a i f = 100a, t case = 125?c v ce = 25v, v ge = 0v, f = 1mhz - - t j = 125?c, v cc = 900v, i 1 t p 10 s, v ce(max) = v ces ?l*. di/dt i 2 iec 60747-9 parameter collector cut-off current gate leakage current gate threshold voltage collector-emitter saturation voltage diode forward current diode maximum forward current diode forward voltage input capacitance module inductance - per arm internal transistor resistance - per arm short circuit. i sc electrical characteristics t case = 25?c unless stated otherwise. symbol i ces i ges v ge(th) v ce(sat) i f i fm v f ? c ies l m r int sc data units a ma a v v v a a v v nf nh m ? a a max. 25 3 0.25 - - - 100 200 - - - - - - - typ. - - - 5.3 2.1 2.7 - - 1.9 2.1 16.5 15 0.12 tbd tbd min. - - - - - - - - - - - - - - - note: l* is the circuit inductance + l m
DIM100CHS12-H000 4/7 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com units ns ns mj ns ns mj c c a mj max. - - - - - - - - - - typ. 220 15 12 65 30 10 2 10 60 3 min. - - - - - - - - - - test conditions i c = 100a v ge = 15v v ce = 600v r g(on) = r g(off) = 4.7 ? l ~ 70nh i f = 100a, v r = 600v, di f /dt = 4800a/ s parameter turn-off delay time fall time turn-off energy loss turn-on delay time rise time turn-on energy loss gate charge diode reverse recovery charge diode reverse current diode reverse recovery energy electrical characteristics t case = 25?c unless stated otherwise symbol t d(off) t f e off t d(on) t r e on q g q rr i rr e rec t case = 125?c unless stated otherwise units ns ns mj ns ns mj c a mj max. - - - - - - - - - typ. 240 20 15 65 30 15 15 75 6 min. - - - - - - - - - test conditions i c = 100a v ge = 15v v ce = 600v r g(on) = r g(off) = 4.7 ? l ~ 70nh i f = 100a, v r = 600v, di f /dt = 4800a/ s parameter turn-off delay time fall time turn-off energy loss turn-on delay time rise time turn-on energy loss diode reverse recovery charge diode reverse current diode reverse recovery energy symbol t d(off) t f e off t d(on) t r e on q rr i rr e rec
DIM100CHS12-H000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 5/7 www.dynexsemi.com fig. 5 diode typical forward characteristics typical characteristics fig. 3 typical output characteristics fig. 4 typical output characteristics 0 25 50 75 100 125 150 175 200 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 collector voltage, v ce - (v) collector current, i c - (a) v ge = 10v v ge = 12v v ge = 15v v ge = 20v common emitter t case = 25c 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 25 50 75 100 125 150 175 200 collector current, i c - (a) collector voltage, v ce - (v) v ge = 10v v ge = 12v v ge = 15v v ge = 20v common emitter t case = 125c 0 25 50 75 100 125 150 175 200 0 0.5 1.0 1.5 2.0 2.5 3.0 forward voltage, v f - (v) forward current, i f - (a) t j = 25c t j = 125c
DIM100CHS12-H000 6/7 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com package details for further package information please visit our website or contact customer services. all dimensions in mm, unless stated ot herwise. do not scale. nominal weight: 270g module outline type: c
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 52. fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (440) 259-2060. fax: (440) 259-2059. tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2003 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
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